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Magnetron Sputtering 磁控溅射系统

AJA Magnetron Sputtering Targets UHV & HV

  1. Description
  2. Specifications
  3. Consultation

Since the establishment in 1991, AJA INTERNATIONAL,. INC. has produced over one hundred kinds of sputtering sources, including many custom sources. According to the geometrical shapes of substrates, chamber configurations, targets’ materials and films’ specifications, there are optional types of sources, like rectangle, circular, converter and cylinder.


Main Characteristics

l Modular magnet array, outside the cooling water

l Sputtering thicker magnetic materials

l Easy replacement for bigger magnetic sputtering materials 

l Integrated gas chimney mechanism

l Targets holder in clamp style with heat-transfer function

l RF and DC generators incorporated

l Atmospheric pressure for operation (0.3Torr - 1.0Torr) 

l In-situ or manual tilt, to gain optimized deposition uniformity

l Customizing supported


Application Area

l CD/DVD coating (eg. for reflection, phase change)

l Semi-Conductor

l Conductive metals / metallic resistance / insulating film

l Transparent electric-conductor (eg. ITO)

l Optical communication (eg. pumping laser)

l Attrition-resistant film

l Lens-coating (eg. For reflection / anti-reflection / hardness / colorfulness)

l Precious metal (targets use efficiency maximized) 

l Film sense

l Surgery / medical facilitates & transplantation use

l Magnetic storage-medium and gaging head (HD, GMR, TMR)

l Photovoltaic film (solar battery)

 

 

Sputtering Sources for Research and Development (HV / UHV)

 
A300-XP UHV in-situ tilt sputtering sources - optimizing uniformity

In terms of the sputtering system with rotary substrate, sputtering sources of AJA can realize in-situ tilt. The rotary sources in the following picture, in terms of its tilt angle, can be accurately controlled outside the vacuum chamber. With changes of working pressure and materials, the accurate adjustment of tilt angle of sputtering sources becomes the key factor of uniformity. Usually, the fixed sputtering sources shall limit the performance of system. While, by the use of in-situ tilt sputtering source, uniformity +/-1.5% at substrate 3 times the size of the source can be achieved.

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400-615-4535
400-615-4535